主要论文 |
代表性论文 [1] Yu Zhao, Bingfeng Fan, Yiting Chen, Yi Zhuo, Zhoujun Pang, Zhen Liu, Gang Wang, Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer, Chin. Phys. B. 2016, 25(7): 078502 [2] Yu Zhao, Wanku Tao, Xu Chen, Jun Liu and Aixiang Wei, Synthesis and characterization of Cu2ZnSnS4 nanocrystals prepared by microwave irradiation method, J Mater Sci: Mater Electron, 2015,26(8):5645-5652 [3] Zhao Yu, Wei Ai-Xiang and Liu Jun, Junction temperature measurement of light-emitting diodes using temperature-dependent capacitance, Acta Physica Sinica, 2015,64(11):118501-118501 [4] Yu Zhao, Wanku Tao, Jun Liu, Aixiang Wei,Rapid synthesis of Cu2ZnSnS4 nanocrystalline thin films directly on transparent conductive glass substrates by microwave irradiation, Materials Letters, 2015,148(1):63-66 [5] Yu Zhao, Wenjiao Zhong, Jun Liu, Zhihao Huang andAixiang Wei. Junction temperature measurement of GaN-based light-emitting diodes using temperature-dependent resistance, Semiconductor Science and Technology, 2014,29(3):035008 [6] Yu Zhao, Jun Liu, Aixiang Wei, and Jian Li. High Power Light-emitting Diodes Package With Phase Change Material, IEEE Transactions on Components, Packaging and Manufacturing Technology, 2014,4(11):1747-1753 [7] Yu Zhao, Zhiqiang Yan, Jun Liu, Aixiang Wei. Synthesis and characterization of CdSe nanocrystalline thin films deposited by chemical bath deposition, Materials Science in Semiconductor Processing, 2013,16(6):1592-1598 [8] Yu Zhao, Aixiang Wei, Bingfeng Fan. Design and tolerance analysis of photonic crystal slabs with ultrahigh reflection. Optical Engineering, 2011,50(11):114602-114602 [9] Yu Zhao, Gang Wang, Xue-Hua Wang. Light emission properties of planar source in multilayer structures with photonic crystal patterns. J. Appl. Phys. 2010,108:063103-063103 [10] Yu Zhao,Xuehua Wang,Bingfeng Fan,Baijun Zhang,Gang Wang,A numerical study of the emission enhancement of light emitting diodes with an interfacial photonic crystal resonance reflector,Semiconductor Science and Technology,2009,24:055013-055013 [11] Yu Zhao, Fazhi Luo,Mixue Zhuang,Zhen Liu,Aixiang We,Jun Liu,Synthesis of nanostructured CuInS2 thin films and theirapplication in dye-sensitized solar cells,Appl. Phys. A,2016,122:200-200 [12] Jun Liu, Fazhi Luo, Aixiang Wei, Zhen Liu, Yu Zhao*, In-situ growth of Cu2ZnSnS4 nanospheres thin film on ransparent conducting glass and its application in dye-sensitized solar cells. Materials Letters,2014,141:228-230 [13] Aixiang Wei, Zhiqiang Yan, Yu Zhao*, Mixue Zhuang, Jun Liu, Solvothermal synthesis of Cu2ZnSnS4 nanocrystalline thin films for application of solar cells. International Journal of Hydrogen Energy,2014,40(1):797-805 [14] Zhiqiang Yan, Yu Zhao*, Mixue Zhuang, Jun Liu, Aixiang Wei, Solvothermal synthesis of CuInS2 powders and CuInS2 thin films for solar cell application, J Mater Sci: Mater Electron, 2013,24:5055-5060 |
知识产权 |
[1] 中国发明专利,一种外延生长用的图形衬底及其制作方法,王钢,招瑜,授权号:ZL 200910041035.9授权日:2012.08.29 [2] 中国发明专利,具有高偏振转换特性的半导体激光器件,王钢,招瑜,授权号: ZL2008101989114,授权日:2015.12.09 [3] 中国发明专利,具有光子晶体高反射层的半导体发光二极管器件,王钢, 招瑜,授权号: ZL2008100272814,授权日:2010.12.22 [4] 中国发明专利,一种Cu2ZnSnS4半导体薄膜的制备方法及其应用魏爱香,颜志强,招瑜,刘俊,陶万库,授权号: ZL014105529810 [5] 中国发明专利,一种Ho3+-Yb3+-F-共掺杂TiO2上转换纳米粉末的制备方法及其应用,宋丽丽,魏爱香,刘俊,招瑜,肖志明,申请公布日:2016.06.22,申请号:2016100284106 [6] 中国发明专利,一种Cu2ZnSnS4/石墨烯复合半导体薄膜的制备方法及其应用,庞洲骏,招瑜,魏爱香,刘俊,肖志明,陈镇海,申请公布日:2016.06.15,申请号:2016100142251 [7] 中国发明专利,一种在FTO衬底上制备铜锌锡硫半导体薄膜的方法及应用,陶万库,魏爱香,招瑜,刘俊,申请公布日:2016.04.06,申请号:2015108010542 [8] 中国发明专利,一种高速数据采集系统中的SDRAM控制方法,魏爱香,林康保,刘俊招瑜,申请公布日:2015.05.27,申请号:201510103038.6 [9] 中国发明专利,基于SOPC的SDRAM测试系统及方法,中国,魏爱香,林康保,刘俊招瑜,申请公布日:2015.05.27,申请号:201510105536.4 [10] 中国发明专利,一种GaN基LED芯片表面粗化的方法,王钢,陈义廷,范冰丰,招瑜,申请公布日:2015.01.28,申请号:2014105431850 [11] 中国发明专利,一种发光二极管封装结构,招瑜,刘俊,魏爱香,申请公布日:2014.04.30,申请号:201410008044.9 [12] 中国发明专利,一种发光二极管飞盘状支架,招瑜,钟文姣,魏爱香,刘俊,黄智灏,赵定健,黎文辉,李耀鹏,王仲东,申请公布日:2014.02.19,申请号:201310560817X [13] 中国发明专利,一种发光二极管的结温测量方法及应用,招瑜,庞洲骏,魏爱香,刘俊,肖志明,申请公布日:2016.02.24,申请号:2015107426141 [14] 中国发明专利,一种发光二极管的结温测量方法及应用,招瑜,钟文姣,魏爱香,刘俊,申请公布日:2013.07.24,申请号:201310099791.3 [15] 中国发明专利,一种光谱可调的ZnO/GaN基白光发光器件结构,招瑜,单梓华,廖世权,邓海生,张彬彬,申请公布日:2012.10.03,申请号:201210145555.6 [16] 中国发明专利,根据空间大小亮度自适应的光源系统,招瑜,张彬彬,廖世权,邓海生,单梓华,申请公布日:2012.09.12,申请号:201210116004.7 [17] 中国发明专利,一种铜铟镓硒薄膜太阳能电池吸收层的制备方法魏爱香,刘军,赵湘辉,招瑜,刘俊,申请公布日:2013.01.02,申请号:2012103217868 [18] 中国发明专利,一种铜铟镓硒薄膜太阳能电池吸收层的制备方法,魏爱香,刘军,赵湘辉,招瑜,刘俊,申请公布日:2012.08.15,申请号:2012100505280 [19] 中国发明专利,一种铜铟镓硒薄膜太阳能电池缓冲层材料的制备方法,魏爱香,刘军,赵湘辉,招瑜,刘俊,申请公布日:2012.07.04,申请号:201210050285.0 [20] 中国发明专利,一种CdSe纳米晶半导体薄膜的制备方法,魏爱香,赵湘辉,招瑜,刘俊,李金庭,申请公布日:2012.08.29,申请号:201110419632.8 [21] 中国发明专利,一种利用光子晶体结构抑制侧向出光的发光二极管器件,张佰君,王钢,招瑜申请公布日:2008.07.23,申请号:2008100261171 |